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| AOD420 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD420 is Pb-free (meets ROHS & Sony 259 specifications). AOD420L is a Green Product ordering option. AOD420 and AOD420L are electrically identical. Features VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 28m (VGS = 10V) RDS(ON) < 42m (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation Power Dissipation B C C Maximum 30 20 10 10 30 15 36 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 16.7 40 1.9 Max 25 50 2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD420 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=10A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=10A TJ=125C 1 40 21 31 32.5 15.6 0.75 1 10 710 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 72 1.1 14.4 VGS=10V, V DS=15V, ID=10A 7 2.6 2.7 5.6 VGS=10V, V DS=15V, R L=1.5, RGEN=3 IF=10A, dI/dt=100A/s IF=10A, dI/dt=100A/s 2.4 15.6 2.2 13.4 4.4 21 3.6 18 8.4 850 28 40 42 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 40 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 50 10V 20 7V 5V 4.5V ID(A) 16 12 8 4 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V ID (A) 4V VGS=3.5V 3.0V 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=10A 45 40 RDS(ON) (m) 35 30 25 20 15 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 ID=10A RDS(ON) (m) 125C 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 40 VGS=10V VGS=4.5V VGS=10V VGS=4.5 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125 25C Alpha & Omega Semiconductor, Ltd. AOD420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=10A 8 800 Ciss 4 Capacitance (pF) 6 VGS (Volts) 600 400 Coss Crss 2 200 0 0 4 8 Qg (nC) Figure 7: Gate-Charge Characteristics 12 16 0 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 25 30 100.0 60 RDS(ON) limited 50 T J(Max)=150C T A=25C 1ms 10.0 10ms 0.1s 1s 100s 40 Power (W) ID (Amps) 30 1.0 TJ(Max)=150C TA=25C 10s DC 20 10 0.1 0.1 1 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Z JA Normalized Transient Thermal Resistance 1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. |
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